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? 2006-2016 microchip technology inc. ds20002019c-page 1 mcp1406/07 features high peak output current: 6.0a (typical) low shoot-through/cross-conduction current in output stage wide input supply voltage operating range: -4.5vto18v high capacitive load drive capability: - 2500 pf in 20 ns - 6800 pf in 40 ns short delay times: 40 ns (typical) matched rise/fall times low supply current: - with logic 1 input C 130 a (typical) - with logic 0 input C 35 a (typical) latch-up protected: will withstand 1.5a reverse current logic input will withstand negative swing up to 5v pin compatible with the tc4420/tc4429 devices space-saving 8-pin soic, pdip and 8-pin 6 x 5 mm dfn packages applications switch mode power supplies pulse transformer drive line drivers motor and solenoid drive general description the mcp1406/07 devices are a family of buffers/mosfet drivers th at feature a single-output with 6a peak drive current capability, low shoot-through current, matched rise/fall times and propagation delay times. these devices are pin-compatible and are improved versions of the tc4420/tc4429 mosfet drivers. the mcp1406/07 mosfet drivers can easily charge and discharge 2500 pf gate capacitance in under 20 ns, provide low enough impedances (in both the on and off states) to ensure th at intended state of the mosfets will not be affected, even by large transients. the input to the mcp1406/07 may be driven directly from either ttl or cmos (3v to 18v). these devices are highly latch-up resistant under any conditions that fall within their power and voltage ratings. they are not subject to damage when up to 5v of noise spiking (of either polarity) occurs on the ground pin. all terminals are fully protected against electrostatic discharge (esd), up to 2.0 kv (hbm) and 400v (mm). the mcp1406/07 single-output 6a mosfet driver family is offered in both surface-mount and pin-through-hole packages with a -40c to +125c temperature rating, making it useful in any wide temperature range application. 6a high-speed power mosfet drivers downloaded from: http:///
mcp1406/07 ds20002019c-page 2 ? 2006-2016 microchip technology inc. package types 1 2 345 6 7 8 v dd v dd out out gnd gnd input nc 8-pin pdip/soic mcp1407 mcp1406 v dd out out gnd v dd gnd input nc 5-pin to-220 mcp1407 mcp1406 v dd out out gnd tab is common to v dd note 1: duplicate pins must both be c onnected for proper operation. 2: exposed pad of the dfn package is electrically isolated; see table 3-1 . 12 3 45 6 7 8 v dd gnd input nc v dd gnd input out gnd 12345 mcp1406 v dd gnd input out gnd 12345 mcp1407 1 2 3 4 8 7 6 5 ep 9 v dd gnd input nc v dd out out gnd 1 2 3 4 8 7 6 5 ep 9 8-pin 6x5 dfn-s ( 2 ) downloaded from: http:///
? 2006-2016 microchip technology inc. ds20002019c-page 3 mcp1406/07 functional block diagram (1) effective input c = 25 pf mcp1406 inverting mcp1407 non-inverting inputgnd v dd 300 mv 4.7v invertingnon-inverting note 1: unused inputs should be grounded. 130 a output output downloaded from: http:///
mcp1406/07 ds20002019c-page 4 ? 2006-2016 microchip technology inc. 1.0 electrical characteristics absolute maximum ratings ? supply voltage ................................................................+20v input voltage ..................................(v dd +0.3v) to (gnd -5v) input current (v in > v dd ) ..............................................50 ma package power dissipation (ta <= +70c) dfn-s .......................................................................2.5w pdip..........................................................................1.2w soic .......................................................................0.83w to-220 ......................................................................3.9w esd protection on all pins ................2 kv (hbm), 400v (mm) ? notice: stresses above those listed under maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any ot her conditions above those indicated in the operational sections of this specification is not intended. exposure to maximum rating conditions for extended periods may affect device reliability. dc characteristics electrical specifications: unless otherwise indicated, t a = +25c, with 4.5v ??? v dd ??? 18v. parameters sym. min. typ. max. units conditions input logic 1 , high input voltage v ih 2.4 1.8 v logic 0 , low input voltage v il 1 . 30 . 8 v input current i in C10 10 a 0v ??? v in ??? v dd input voltage v in -5 v dd +0.3 v output high output voltage v oh v dd C 0.025 v dc test low output voltage v ol 0.025 v dc test output resistance, high r oh 2 . 12 . 8 ? i out = 10 ma, v dd = 18v output resistance, low r ol 1 . 52 . 5 ? i out = 10 ma, v dd = 18v peak output current i pk 6 a v dd ? 18v ( note 1 ) continuous output current i dc 1.3 a note 1 , note 2 latch-up protection withstand reverse current i rev 1.5 a duty cycle ??? 2%, t ?? 300 s switching time ( note 3 ) rise time t r 2 0 3 0 n s figure 4-1 , figure 4-2 c l = 2500 pf fall time t f 2 0 3 0 n s figure 4-1 , figure 4-2 c l = 2500 pf delay time t d1 4 0 5 5 n s figure 4-1 , figure 4-2 delay time t d2 4 0 5 5 n s figure 4-1 , figure 4-2 power supply supply voltage v dd 4.5 18.0 v power supply current i s 130 250 a v in = 3v i s 35 100 a v in = 0v note 1: tested during characterization, not production tested. 2: valid for at (to-220) and mf (dfn-s) packages only. t a = +25c 3: switching times ensured by design. downloaded from: http:///
? 2006-2016 microchip technology inc. ds20002019c-page 5 mcp1406/07 dc characteristics (over operating te mperature range) electrical specifications: unless otherwise indicated, oper ating temperature range with 4.5v ??? v dd ??? 18v. parameters sym. min. typ. max. units conditions input logic 1 , high input voltage v ih 2.4 v logic 0 , low input voltage v il 0 . 8v input current i in -10 +10 a 0v ??? v in ??? v dd input voltage v in -5 v dd +0.3 v output high output voltage v oh v dd C 0.025 v dc test low output voltage v ol 0.025 v dc test output resistance, high r oh 3 . 05 . 0 ? i out = 10 ma, v dd = 18v output resistance, low r ol 2 . 35 . 0 ? i out = 10 ma, v dd = 18v switching time ( note 1 ) rise time t r 2 54 0n s figure 4-1 , figure 4-2 c l = 2500 pf fall time t f 2 54 0n s figure 4-1 , figure 4-2 c l = 2500 pf delay time t d1 5 06 5n s figure 4-1 , figure 4-2 delay time t d2 5 06 5n s figure 4-1 , figure 4-2 power supply supply voltage v dd 4.5 18.0 v power supply current i s 2 0 05 0 0 a v in = 3v 5 01 5 0 v in = 0v note 1: switching times ensured by design. downloaded from: http:///
mcp1406/07 ds20002019c-page 6 ? 2006-2016 microchip technology inc. temperature characteristics electrical specifications: unless otherwise noted, all parameters apply with 4.5v ? v dd ? 18v. parameters sym. min. typ. max. units conditions temperature ranges specified temperature range t a -40 +125 c maximum junction temperature t j +150 c storage temperature range t a -65 +150 c package thermal resistances junction-to-ambient thermal resistance, 8-l 6x5 dfn ? ja 3 1 . 8 c / w note 1 junction-to-ambient thermal resistance, 8-l pdip ? ja 6 5 . 2 c / w note 1 junction-to-ambient thermal resistance, 8-l soic ? ja 9 6 . 3 c / w note 1 junction-to-ambient thermal resistance, 5-l to-220 ? ja 2 0 . 1 c / w note 1 junction-to-case (bottom) thermal resistance, 5-l to-220 ? jc(bot) 3.2 c/w note 2 junction-to-top characterization parameter, 8-l 6x5 dfn ? jt 0.2 c/w note 1 junction-to-top characterization parameter, 8-l pdip ? jt 8.8 c/w note 1 junction-to-top characterization parameter, 8-l soic ? jt 3.2 c/w note 1 junction-to-top characterization parameter, 5-l to-220 ? jt 3.6 c/w note 1 junction-to-board characterization parameter, 8-l 6x5 dfn ? jb 15.5 c/w note 1 junction-to-board characterization parameter, 8-l pdip ? jb 36.1 c/w note 1 junction-to-board characterization parameter, 8-l soic ? jb 60.7 c/w note 1 junction-to-board characterization parameter, 5-l to-220 ? jb 4.0 c/w note 1 note 1: parameter is determined using a high 2s2p 4-layer board, as described in jesd 51-7, as well as in jesd 51-5, for packages with exposed pads. 2: parameter is determined using a 1s0p 2-layer board with a cold plate attached to indicated location. downloaded from: http:///
? 2006-2016 microchip technology inc. ds20002019c-page 7 mcp1406/07 2.0 typical performance curves note: unless otherwise indicated, t a = +25c with 4.5v ?? v dd ? 18v. figure 2-1: rise time vs. supply voltage. figure 2-2: rise time vs. capacitive load. figure 2-3: rise and fall times vs. temperature. figure 2-4: fall time vs. supply voltage. figure 2-5: fall time vs. capacitive load. figure 2-6: propagation delay vs. supply voltage. note: the graphs and tables provided following this note ar e a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or t ables, the data presented may be outside the specified operating range (e.g., outside specified power suppl y range) and therefore outs ide the warranted range. 0 20 40 60 80 100 120 4 6 8 1012141618 supply voltage (v) rise time (ns) 100 pf 4,700 pf 1,000 pf 6,800 pf 2,500 pf 10,000 pf 8,200 pf 0 10 20 30 40 50 60 70 80 100 1000 10000 capacitive load (pf) rise time (ns) 5v 15v 10v 0 5 10 15 20 25 30 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature ( o c) rise and fall time (ns) v dd = 18v t rise t fall 0 10 20 30 40 50 60 70 80 4 6 8 1012141618 supply voltage (v) fall time (ns) 100 pf 4,700 pf 1,000 pf 6,800 pf 2,500 pf 10,000 pf 8,200 pf 0 10 20 30 40 50 60 70 100 1000 10000 capacitive load (pf) fall time (ns) 5v 15v 10v 35 45 55 65 75 85 4 6 8 10 12 14 16 18 supply voltage (v) propagation delay (ns) v in = 5v t d1 t d2 downloaded from: http:///
mcp1406/07 ds20002019c-page 8 ? 2006-2016 microchip technology inc. note: unless otherwise indicated, t a = +25c with 4.5v ?? v dd ? 18v. figure 2-7: propagation delay time vs. input amplitude. figure 2-8: propagation delay time vs. temperature. figure 2-9: quiescent current vs. supply voltage. figure 2-10: quiescent current vs. temperature. figure 2-11: input threshold vs. supply voltage. figure 2-12: input threshold vs. temperature. 25 50 75 100 125 150 175 200 234567891 0 input amplitude (v) propagation delay (ns) v dd = 12v t d1 t d2 30 35 40 45 50 55 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature ( o c) propagation delay (ns) v dd = 18v v in = 5v t d1 t d2 0 20 40 60 80 100 120 140 160 180 4 6 8 10 12 14 16 18 supply voltage (v) quiescent current (a) input = 1 input = 0 0 50 100 150 200 250 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature ( o c) quiescent current (a) input = low v dd = 18v input = high 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 4 6 8 1012141618 supply voltage (v) input threshold (v) v hi v lo 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature ( o c) input threshold (v) v dd = 12v v hi v lo downloaded from: http:///
? 2006-2016 microchip technology inc. ds20002019c-page 9 mcp1406/07 note: unless otherwise indicated, t a = +25c with 4.5v ??? v dd ?? 18v. figure 2-13: supply current vs. capacitive load. figure 2-14: supply current vs. capacitive load. figure 2-15: supply current vs. capacitive load. figure 2-16: supply current vs. frequency. figure 2-17: supply current vs. frequency. figure 2-18: supply current vs. frequency. 0 25 50 75 100 125 150 100 1000 10000 capacitive load (pf) supply current (ma) 500 khz 1 mhz 200 khz 100 khz v dd = 18v 50 khz 0 25 50 75 100 125 150 100 1000 10000 capacitive load (pf) supply current (ma) 500 khz 1 mhz 200 khz 100 khz v dd = 12v 50 khz 2 mhz 0 10 20 30 40 50 60 70 80 90 100 100 1000 10000 capacitive load (pf) supply current (ma) 500 khz 1 mhz 200 khz 100 khz v dd = 6v 50 khz 2 mhz 0 20 40 60 80 100 120 10 100 1000 frequency (khz) supply current (ma) 100 pf 4,700 pf 1,000 pf 6,800 pf v dd = 18v 2,500 pf 10,000 pf 0 10 20 30 40 50 60 70 80 10 100 1000 frequency (khz) supply current (ma) 100 pf 4,700 pf 1,000 pf 6,800 pf v dd = 12v 2,500 pf 10,000 pf 0 5 10 15 20 25 30 35 40 10 100 1000 frequency (khz) supply current (ma) 100 pf 4,700 pf 1,000 pf 6,800 pf v dd = 6v 2,500 pf 10,000 pf downloaded from: http:///
mcp1406/07 ds20002019c-page 10 ? 2006-2016 microchip technology inc. note: unless otherwise indicated, t a = +25c with 4.5v ?? v dd ?? 18v. figure 2-19: output resistance (output high) vs. supply voltage. figure 2-20: output resistance (output low) vs. supply voltage. figure 2-21: crossover energy vs. supply voltage. 1 2 3 4 5 6 7 4 6 8 10 12 14 16 18 supply voltage (v) r out-hi ( : ) v in = 2.5v (mcp1407) v in = 0v (mcp1406) t j = +125 o c t j = +25 o c 1 2 3 4 5 6 7 4 6 8 10 12 14 16 18 supply voltage (v) r out-lo ( : ) v in = 0v (mcp1407) v in = 2.5v (mcp1406) t j = +125 o c t j = +25 o c 1.00 10.00 100.00 4 6 8 10 12 14 16 18 crossover energy (na ? sec) supply voltage (v) downloaded from: http:///
? 2006-2016 microchip technology inc. ds20002019c-page 11 mcp1406/07 3.0 pin descriptions the descriptions of the pins are listed in table 3-1 . 3.1 supply input (v dd ) v dd is the bias supply input for the mosfet driver and has a voltage range of 4.5v to 18v. this input must be decoupled to ground with local capacitors. the bypass capacitors provide a localized low-impedance path for the peak currents that are to be provided to the load. 3.2 control input (input) the mosfet driver input is a high-impedance, ttl/cmos-compatible input. the input also has hys- teresis between the high and low input levels, allowing them to be driven from slow rising and falling signals, and to provide noise immunity. 3.3 ground (gnd) ground is the device return pin. the ground pin should have a low impedance connection to the bias supply source return. high peak currents will flow out the ground pin when the capacitive load is being discharged. 3.4 cmos push-pull output (output) the output is a cmos push-p ull output that is capable of sourcing peak currents of 6a (v dd = 18v). the low output impedance ensures the gate of the external mosfet will stay in the intended state even during large transients. the output pins also have reverse current latch-up ratings of 1.5a. 3.5 exposed metal pad (6x5 dfn only) the exposed metal pad of the dfn package is not internally connected to any potential. therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board to aid in heat removal from the package. 3.6 to-220 metal tab the metal tab on the to-220 package is at v dd potential. this metal tab is not intended to be the v dd connection to mcp1406/07. v dd should be supplied using the supply input pin of the to-220. table 3-1: pin function table ( 1 ) 5-pin to-220 8-pin 6x5 dfn 8-pin pdip, soic symbol description 1 1 v dd supply input 1 2 2 input control input 3 3 nc no connection 2 4 4 gnd ground 4 5 5 gnd ground 5 6 6 output cmos push-pull output 7 7 output cmos push-pull output 388v dd supply input 9 ep exposed metal pad tab v dd metal tab at v dd potential note 1: duplicate pins must be connected for proper operation. downloaded from: http:///
mcp1406/07 ds20002019c-page 12 ? 2006-2016 microchip technology inc. 4.0 application information 4.1 general information mosfet drivers are high-speed, high current devices which are intended to provide high peak currents to charge the gate capacitance of external mosfets or igbts. in high frequency switching power supplies, the pwm controller may not have the drive capability to directly drive the power mosfet. a mosfet driver like the mcp1406/07 family can be used to provide additional drive current capability. 4.2 mosfet driver timing the ability of a mosfet driver to transition from a fully-off state to a fully-on state are characterized by the drivers rise time (t r ), fall time (t f ) and propagation delays (t d1 and t d2 ). the mcp1406/07 family of devices is able to make this transition very quickly. figure 4-1 and figure 4-2 show the test circuits and timing waveforms used to verify the mcp1406/07 timing. figure 4-1: inverting driver timing waveform. figure 4-2: non-inverting driver timing waveform. 4.3 decoupling capacitors careful layout and decoupling capacitors are highly recommended when using mosfet drivers. large currents are required to charge and discharge capacitive loads quickly. for example, 2.25a are needed to charge a 2500 pf load with 18v in 20 ns. to operate the mosfet driver over a wide frequency range with low supply impedance, a ceramic and a low esr film capacitor are recommended to be placed in parallel between the driver v dd and the gnd. a 1.0 f low esr film capacitor and a 0.1 f ceramic capacitor placed between pins 1, 8 and 4, 5 should be used. these capacitors should be placed close to the driver to minimize circuit board parasitics and provide a local source for the required current. 0.1 f +5v 10% 90% 10% 90% 10% 90% 18v 1f 0v 0v mcp1406 c l = 2500 pf input input output t d1 t f t d2 output t r v dd = 18v ceramic input signal: t rise = t fall = 10ns, 100 hz, 0-5v square wave 90% input t d1 t f t d2 output t r 10% 10% 10% +5v 18v 0v 0v 90% 90% 0.1 f 1f mcp1407 c l = 2500 pf input output v dd = 18v ceramic input signal: t rise = t fall = 10ns, 100 hz, 0-5v square wave downloaded from: http:///
? 2006-2016 microchip technology inc. ds20002019c-page 13 mcp1406/07 4.4 pcb layout considerations proper pcb layout is important in a high current, fast switching circuit to provide proper device operation and robustness of design. pcb trace loop area and inductance should be minimized by the use of a ground plane or ground trace located under the mosfet gate drive signals, separate analog and power grounds, and local driver decoupling. the mcp1406/07 devices have two pins each for v dd , output and gnd. both pins must be used for proper operation. this also lowers path inductance which will, along with proper decoupling, help minimize ringing in the circuit. placing a ground plane beneath the mcp1406/07 will help as a radiated noise shield as well as providing some heat sinking for power dissipated within the device. 4.5 power dissipation the total internal power dissipation in a mosfet driver is the summation of three separate power dissipation elements, which can be calculated by using the following equation: equation 4-1: 4.5.1 capacitive load dissipation the power dissipation caused by a capacitive load is a direct function of frequency, total capacitive load and supply voltage. the power lost in the mosfet driver for a complete charging a nd discharging cycle of a mosfet can be determined by means of this equation: equation 4-2: 4.5.2 quiescent power dissipation the power dissipation associated with the quiescent current draw depends on the st ate of the input pin. the mcp1406/07 devices have a quiescent current draw when the input is high of 0.13 ma (typ) and 0.035 ma (typ) when the input is low. the quiescent power dissi- pation can be determined by using this equation: equation 4-3: 4.5.3 operating power dissipation the operating power dissipation occurs each time the mosfet driver output transitions; this is because, for a very short period of time, both mosfets in the output stage are on simultaneously. this cross-conduction current leads to a power dissipation, as described by the following equation: equation 4-4: p t p l p q p cc ++ = where: p t = total power dissipation p l = load power dissipation p q = quiescent power dissipation p cc = operating power dissipation p l fc t v dd ? ? 2 = where: f = switching frequency c t = total load capacitance v dd = mosfet driver supply voltage p q i qh di ql 1 d C ?? ? + ? ?? v dd ? = where: i qh = quiescent current in the high state d = duty cycle i ql = quiescent current in the low state v dd = mosfet driver supply voltage p cc cc f ? v dd ? = where: cc = cross-conduction constant (a sec.) f = switching frequency v dd = mosfet driver supply voltage downloaded from: http:///
mcp1406/07 ds20002019c-page 14 ? 2006-2016 microchip technology inc. 5.0 packaging information 5.1 package marking information (not to scale) legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week 01) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-f ree jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part nu mber cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 8-lead soic (3.90 mm) example nnn mcp1406e sn ^^ 1510 256 3 e yywwnnn xxxxxxxxx xxxxxxxxx mcp1406 eat ^^ 15102562 5-lead to-220 example 3 e pin 1 nnn pin 1 8-lead dfn-s (6x5x0.9 mm) example mcp1406 e/mf ^^ 1510 256 3 e downloaded from: http:///
? 2006-2016 microchip technology inc. ds20002019c-page 15 mcp1406/07 legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week 01) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part nu mber cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e xxxxxxxxxxxxxnnn yyww 8-lead pdip (300 mil) example mcp1407 e/p ^^256 1510 3 e downloaded from: http:///
mcp1406/07 ds20002019c-page 16 ? 2006-2016 microchip technology inc. e q d d1 h1 a a1 a2 c n e e1 b 1 2 3 l chamferoptional p downloaded from: http:///
? 2006-2016 microchip technology inc. ds20002019c-page 17 mcp1406/07 note 2 a1 a a3 note 1 12 e n d exposed pad note 1 2 1 e2 l n e b k bottom view top view d2 downloaded from: http:///
mcp1406/07 ds20002019c-page 18 ? 2006-2016 microchip technology inc. downloaded from: http:///
? 2006-2016 microchip technology inc. ds20002019c-page 19 mcp1406/07 b a for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging note: microchip technology drawing no. c04-018d sheet 1 of 2 8-lead plastic dual in-line (p) - 300 mil body [pdip] eb e a a1 a2 l 8x b 8x b1 d e1 c c plane .010 c 12 n note 1 top view end view side view e downloaded from: http:///
mcp1406/07 ds20002019c-page 20 ? 2006-2016 microchip technology inc. microchip technology drawing no. c04-018d sheet 2 of 2 for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging note: 8-lead plastic dual in-line (p) - 300 mil body [pdip] units inches dimension limits min nom max number of pins n 8 pitch e .100 bsc top to seating plane a - - .210 molded package thickness a2 .115 .130 .195 base to seating plane a1 .015 shoulder to shoulder width e .290 .310 .325 molded package width e1 .240 .250 .280 overall length d .348 .365 .400 tip to seating plane l .115 .130 .150 lead thickness c .008 .010 .015 upper lead width b1 .040 .060 .070 lower lead width b .014 .018 .022 overall row spacing eb - - .430 bsc: basic dimension. theoretically exact value shown without tolerances. 3. 1. protrusions shall not exceed .010" per side. 2.4. noes: -- dimensions d and e1 do not include mold flash or protrusions. mold flash or pin 1 visual index feature may vary, but must be located within the hatched area. significant characteristic dimensioning and tolerancing per asme y14.5m e datum a datum a e b e 2 b e 2 alternate lead design (vendor dependent) downloaded from: http:///
? 2006-2016 microchip technology inc. ds20002019c-page 21 mcp1406/07 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging downloaded from: http:///
mcp1406/07 ds20002019c-page 22 ? 2006-2016 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging downloaded from: http:///
? 2006-2016 microchip technology inc. ds20002019c-page 23 mcp1406/07 downloaded from: http:///
mcp1406/07 ds20002019c-page 24 ? 2006-2016 microchip technology inc. notes: downloaded from: http:///
? 2006-2016 microchip technology inc. ds20002019c-page 25 mcp1406/07 appendix a: revision history revision c (april 2016) the following is the list of modifications: updated the package thermal resistances sec- tion of temperature characteristics table with the latest information. updated figure 2-21 in section 2.0 typical performance curves . revision b (may 2012) the following is the list of modifications: removed the informati on referring to the electrostatic discharge from the general description section. revision a (december 2006) original release of this document. downloaded from: http:///
mcp1406/07 ds20002019c-page 26 ? 2006-2016 microchip technology inc. notes: downloaded from: http:///
? 2006-2016 microchip technology inc. ds20002019c-page 27 mcp1406/07 product identification system to order or obtain information, e.g., on pricing or de livery, refer to the factory or the listed sales office . device: mcp1406: 6a high-speed mosfet driver, inverting mcp1406t: 6a high-speed mosfet driver, inverting, tape and reel mcp1407: 6a high-speed mosfet driver, non-inverting mcp1407t: 6a high-speed mosfet driver, non-inverting, tape and reel temperature range: e = -40c to +125c package: * at = plastic transistor outline, 5-lead (to-220) mf = plastic dual flat - 6x5 mm body, 8-lead (dfn-s) p = plastic dual in-line - 300 mil body, 8-lead (pdip) sn = plastic small outline - narrow, 3.90 mm body, 8-lead (soic) * all package offerings are pb free (lead free) examples: a) mcp1406-e/mf: 6a high-speed mosfet driver, inverting, 8ld dfn package b) mcp1406-e/at: 6a high-speed mosfet driver, inverting, 5ld to-220 package c) mcp1406-e/sn: 6a high-speed mosfet driver, inverting, 8ld soic package d) mcp1406-e/p: 6a high-speed mosfet driver, inverting, 8ld pdip package e) mcp1406t-e/mf: tape and reel, 6a high-speed mosfet driver, inverting, 8ld dfn package f) mcp1406t-e/sn: tape and reel, 6a high-speed mosfet driver, inverting, 8ld soic package a) mcp1407-e/mf: 6a high-speed mosfet driver, non-inverting, 8ld dfn package b) mcp1407-e/at: 6a high-speed mosfet driver, non-inverting, 5ld to-220 package c) mcp1407-e/sn: 6a high-speed mosfet driver, non-inverting, 8ld soic package d) mcp1407-e/p: 6a high-speed mosfet driver, non-inverting, 8ld pdip package e) mcp1407t-e/mf: tape and reel, 6a high-speed mosfet driver, non-inverting, 8ld dfn package f) mcp1407t-e/sn: tape and reel, 6a high-speed mosfet driver, non-inverting, 8ld soic package part no. x xx package temperature range device xxx tape & reel downloaded from: http:///
mcp1406/07 ds20002019c-page 28 ? 2006-2016 microchip technology inc. notes: downloaded from: http:///
? 2006-2016 microchip technology inc. ds20002019c-page 29 information contained in this publication regarding device applications and the like is prov ided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application me ets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safe ty applications is entirely at the buyers risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting fr om such use. no licenses are conveyed, implicitly or ot herwise, under any microchip intellectual property rights unless otherwise stated. trademarks the microchip name and logo, the microchip logo, anyrate, dspic, flashflex, flexpwr, heldo, jukeblox, k ee l oq , k ee l oq logo, kleer, lancheck, link md, medialb, most, most logo, mplab, optolyzer, pic, picstart, pic32 logo, righttouch, spynic, sst, sst logo, superflash and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. clockworks, the embedded control solutions company, ethersynch, hyper speed control, hyperlight load, intellimos, mtouch, precision edge, and quiet-wire are registered trademarks of microc hip technology incorporated in the u.s.a. analog-for-the-digital age, any capacitor, anyin, anyout, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dynamic average matching, dam, ecan, ethergreen, in-circuit serial programming, icsp, inter-chip connectivity, jitterblocker, kleernet, kleernet logo, miwi, motorbench, mpasm, mpf, mplab certified logo, mplib, mplink, multitrak, netdetach, omniscient code generation, picdem, picdem.net, pickit, pictail, puresilicon, righttouch logo, real ice, ripple blocker, serial quad i/o, sqi, superswitcher, superswitcher ii, total endurance, tsharc, usbcheck, varisense, viewspan, wiperlock, wireless dna, and zena are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of mi crochip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. gestic is a registered tradem arks of microchip technology germany ii gmbh & co. kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2006-2016, microchip technology incorporated, printed in the u.s.a., all rights reserved. isbn: 978-1-5224-0450-7 note the following details of the code protection feature on microchip devices: microchip products meet the specification cont ained in their particular microchip data sheet. microchip believes that its family of products is one of the mo st secure families of its kind on the market today, when used i n the intended manner and under normal conditions. there are dishonest and possibly illegal meth ods used to breach the code protection fe ature. all of these methods, to our knowledge, require using the microchip products in a manner outside the operating specif ications contained in microchips data sheets. most likely, the person doing so is engaged in theft of intellectual property. microchip is willing to work with the customer who is concerned about the integrity of their code. neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as unbreakable. code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products. attempts to break microchips c ode protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your softwa re or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the companys quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microper ipherals, nonvolatile memory and analog products. in addition, microchips quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 == downloaded from: http:///
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